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  UT75N80 UT75N80 UT75N80 UT75N80 unitpower n - c h a n n e l e n h a n c e m e n t m o d e m o s f e t c o p y r i g h t ? r e v . p . 1 - f e b . , 2 0 1 0 1 r e s e r v e s t h e r i g h t t o m a k e c h a n g e s t o i m p r o v e r e l i a b i l i t y o r m a n u f a c t u r a b i l i t y w i t h o u t n o t i c e , a n d a d v i s e c u s t o m e r s t o o b t a i n t h e l a t e s t v e r s i o n o f r e l e v a n t i n f o r m a t i o n t o v e r i f y b e f o r e p l a c i n g o r d e r s . p i n d e s c r i p t i o n o r d e r i n g a n d m a r k i n g i n f o r m a t i o n f e a t u r e s a p p l i c a t i o n s 8 0 v / 7 0 a , r d s ( o n ) = 1 1 m ? ( m a x . ) @ v g s = 1 0 v r e l i a b l e a n d r u g g e d l e a d f r e e a n d g r e e n d e v i c e s a v a i l a b l e ( r o h s c o m p l i a n t ) s y n c h r o n o u s r e c t i f i c a t i o n . n - c h a n n e l m o s f e t t o p v i e w o f t o - 2 2 0 g s d n o t e : l e a d - f r e e p r o d u c t s c o n t a i n m o l d i n g c o m p o u n d s / d i e a t t a c h m a t e r i a l s a n d 1 0 0 % m a t t e t i n p l a t e t e r m i n a - t i o n f i n i s h ; w h i c h a r e f u l l y c o m p l i a n t w i t h r o h s . l e a d - f r e e p r o d u c t s m e e t o r e x c e e d t h e l e a d - f r e e r e q u i r e m e n t s o f i p c / j e d e c j - s t d - 0 2 0 d f o r m s l c l a s s i f i c a t i o n a t l e a d - f r e e p e a k r e f l o w t e m p e r a t u r e . d e f i n e s g r e e n t o m e a n l e a d - f r e e ( r o h s c o m p l i a n t ) a n d h a l o g e n f r e e ( b r o r c l d o e s n o t e x c e e d 9 0 0 p p m b y w e i g h t i n h o m o g e n e o u s m a t e r i a l a n d t o t a l o f b r a n d c l d o e s n o t e x c e e d 1 5 0 0 p p m b y w e i g h t ) . handling code temperature range package code package code operating junction temperature range c : -55 to 175 o c handling code tu : tube assembly material g : halogen and lead free device xxxxx xxxxx - date code assembly material g d s p o w e r m a n a g e m e n t i n i n v e r t e r s y s t e m s . unitpower unitpower unitpower unitpower unitpower technology ltd t:to-220
UT75N80 2 a b s o l u t e m a x i m u m r a t i n g s symbol parameter rati ng unit common ra t ings (t a =25 c un less otherwise noted) v dss drain - source volt age 80 v gss ga te - source voltage 25 v t j maximum junction t emp e ra ture 175 t stg sto ra ge t emperat u re range - 55 to 175 ? i s d iode c ontinuous forward cu r rent 70 i d p 300 s pulse drai n cur re nt tested t c =25 ? 280 t c =25 ? 70 i d continuous d ra in current t c =100 ? 50 a t c =25 ? 100 p d maximum power d issipation t c =100 ? 50 w r jc thermal resista nce - junc t ion t o case 1.5 r ja thermal resista nce - junc t ion t o a mb ient 62.5 ? /w e as avalanc he energ y, s in g le pu lsed l=2mh 0.8 j e l e c t r i c a l c h a r a c t e r i s t i c s ( t a = 2 5 c u n l e s s o t h e r w i s e n o t e d ) symbol parameter test condition min. typ. ma x. unit sta t ic characteristics bv dss drain - source breakdown volt age v gs =0 v , i ds =250 a 80 - - v v ds = 64 v , v gs =0v - - 1 i dss zero gate volta ge dra in cu rrent t j = 85 ? - - 30 a v gs(t h) gate thr esho ld volta ge v ds =v gs , i ds =250 a 2 3 4 v i gss gate leaka ge cur rent v gs = 25 v, v ds =0v - - 100 n a r ds (o n) a drain - source on - stat e r esistance v gs = 10 v, i ds = 40 a - 8 11 m ? diode characteristics v sd a d iode forward v o l tage i sd = 20 a , v gs =0v - 0.8 1.3 v t rr rev erse r ecovery time - 50 - ns qrr reverse r ecovery charge i sd = 40 a , dl sd /dt = 100a/ s - 90 - nc c o p y r i g h t ? r e v . p . 1 - f e b . , 2 0 1 0 unitpower technology ltd unitpower UT75N80
UT75N80 3 e l e c t r i c a l c h a r a c t e r i s t i c s ( c o n t . ) ( t a = 2 5 c u n l e s s o t h e r w i s e n o t e d ) symbol parameter test condition min. typ. ma x. unit dynam ic character istics b r g gate resistance v gs = 0 v ,v ds =0v ,f=1mhz - 1.3 - ? c iss inp u t ca pacitance - 3000 4200 c oss output capacitance - 350 - c r ss reverse transfer capacit ance v gs =0 v, v ds =30v, f requ ency =1.0mhz - 200 - pf t d(on) turn - on delay time - 22 40 t r turn - on r ise time - 14 25 t d (of f) turn - o f f delay time - 58 104 t f turn - o f f fa l l t ime v dd = 30 v, r l = 30 ? , i d s =1a, v gen =10 v , r g =6 ? - 25 45 ns gate ch a rge ch a racteristics b q g total gate charge - 77 108 q gs gate - source charge - 22 - q gd gate - dra in charge v ds = 40 v , v gs = 10 v, i d s = 40 a - 23 - nc note a : pulse test ; pul s e width 3 00 s, duty cycle 2% . note b : gua ranteed by design, not subject to production testing . c o p y r i g h t ? r e v . p . 1 - f e b . , 2 0 1 0 unitpower technology ltd unitpower UT75N80
4 p a c k a g e i n f o r m a t i o n to-220 a2 l l 1 e p q d h 1 a a1 c d 1 e1 d 2 b b2 e/2 e e2 s y m b o l min. max. 4.83 0.51 1.14 1.78 0.36 0.61 14.22 16.51 1.40 12.19 a a1 b2 c d d1 d2 e millimeters b 0.38 1.02 2.54 bsc to-220 9.65 10.67 6.86 0.100 bsc min. max. inches 0.190 0.020 0.015 0.040 0.045 0.070 0.014 0.024 0.560 0.650 0.480 0.380 0.420 0.270 3.56 0.140 0.055 e1 0.355 0.250 0.580 p l l1 e 12.70 8.38 9.02 6.35 14.73 0.500 0.330 q h1 5.84 6.86 0.230 0.270 4.09 0.161 2.03 a2 2.92 0.080 0.115 e2 0.76 0.030 12.88 0.507 0.350 8.89 3.53 0.139 2.54 3.43 0.100 0.135 note: follow jedec to-220 ab. c o p y r i g h t ? r e v . p . 1 - f e b . , 2 0 1 0 unitpower technology ltd unitpower UT75N80
5 c l a s s i f i c a t i o n p r o f i l e profile feature sn - pb eutectic assembly pb - free assembly preheat & soak temperature min (t smin ) temperature max (t smax ) time (t smin to t smax ) ( t s ) 100 c 150 c 60 - 120 seconds 150 c 200 c 60 - 1 2 0 seconds average ramp - up rate (t smax to t p ) 3 c/second ma x. 3 c/second max. liquidous temperature ( t l ) time at l iquidous (t l ) 183 c 60 - 150 seconds 217 c 60 - 150 seconds peak package body temperature (t p ) * see classification temp in table 1 see classification temp in table 2 time (t p ) ** within 5 c of the spec ified c lassification t emperature ( t c ) 2 0 ** seconds 3 0 ** seconds average r amp - down rate (t p to t smax ) 6 c/second max. 6 c/second max. time 25 c to p eak t emperature 6 minutes max. 8 minutes max. * tolerance for peak profile temperature (t p ) is defined a s a supplier minimum and a user maximum. ** tolerance for time at peak profile temperature (t p ) is defined as a supplier minimum and a user maximum. c l a s s i f i c a t i o n r e f l o w p r o f i l e s c o p y r i g h t ? r e v . p . 1 - f e b . , 2 0 1 0 unitpower technology ltd unitpower UT75N80
6 c l a s s i f i c a t i o n r e f l o w p r o f i l e s ( c o n t . ) table 2. pb - free p roces s c lassifi cation temperatu res (tc) pack age thick ness volume mm 3 <350 vol ume mm 3 350 - 2000 volume mm 3 >2 000 <1.6 mm 260 c 260 c 260 c 1 .6 mm 2.5 mm 260 c 250 c 245 c 2.5 mm 250 c 245 c 245 c table 1. snpb eutectic process classification temperatures (tc) package thickness volume mm 3 <350 volume mm 3 350 <2.5 mm 235 c 22 0 c 2.5 mm 220 c 220 c r e l i a b i l i t y t e s t p r o g r a m test item method description solderability jesd - 22, b102 5 sec, 245 c ho lt jesd - 22, a108 1000 hrs, bias @ 125 c pct jesd - 22, a102 168 hrs, 100 % rh, 2atm , 121 c tct jesd - 22, a104 500 cycles, - 65 c~150 c c o p y r i g h t ? r e v . p . 1 - f e b . , 2 0 1 0 unitpower technology ltd unitpower UT75N80


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